{"title":"采用0.13 μ SiGe BiCMOS工艺的-1.5 dBm OP1dB的紧凑型24-32 GHz线性上变频混频器","authors":"J. Qayyum, J. Albrecht, A. Ulusoy","doi":"10.1109/SIRF.2019.8709097","DOIUrl":null,"url":null,"abstract":"This work demonstrates a 24-32 GHz upconverting mixer implemented in SiGe process technology. The mixer uses double-balanced Gilbert cell architecture with on-chip transformer-based baluns for the LO input and RF output ports. With LO power of 6 dBm, the mixer achieves a maximum conversion gain of 13.7 dB at 26.5 GHz, a 24-32 GHz 3-dB bandwidth, IF-bandwidth of 0.25-1.25 GHz on both side-bands with 27 GHz LO frequency and OP1dB of -1.5 dBm at 28 GHz. It occupies an area of $468-\\mu {m}\\times 465-\\mu{m}$ consuming 90 mW from a 2.5 V power supply. The performance is comparable to any state-of-the-art mixers in similar silicon technologies.","PeriodicalId":356507,"journal":{"name":"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Compact 24-32 GHz Linear Upconverting Mixer with -1.5 dBm OP1dB using 0.13-μ SiGe BiCMOS Process\",\"authors\":\"J. Qayyum, J. Albrecht, A. Ulusoy\",\"doi\":\"10.1109/SIRF.2019.8709097\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work demonstrates a 24-32 GHz upconverting mixer implemented in SiGe process technology. The mixer uses double-balanced Gilbert cell architecture with on-chip transformer-based baluns for the LO input and RF output ports. With LO power of 6 dBm, the mixer achieves a maximum conversion gain of 13.7 dB at 26.5 GHz, a 24-32 GHz 3-dB bandwidth, IF-bandwidth of 0.25-1.25 GHz on both side-bands with 27 GHz LO frequency and OP1dB of -1.5 dBm at 28 GHz. It occupies an area of $468-\\\\mu {m}\\\\times 465-\\\\mu{m}$ consuming 90 mW from a 2.5 V power supply. The performance is comparable to any state-of-the-art mixers in similar silicon technologies.\",\"PeriodicalId\":356507,\"journal\":{\"name\":\"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2019.8709097\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2019.8709097","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Compact 24-32 GHz Linear Upconverting Mixer with -1.5 dBm OP1dB using 0.13-μ SiGe BiCMOS Process
This work demonstrates a 24-32 GHz upconverting mixer implemented in SiGe process technology. The mixer uses double-balanced Gilbert cell architecture with on-chip transformer-based baluns for the LO input and RF output ports. With LO power of 6 dBm, the mixer achieves a maximum conversion gain of 13.7 dB at 26.5 GHz, a 24-32 GHz 3-dB bandwidth, IF-bandwidth of 0.25-1.25 GHz on both side-bands with 27 GHz LO frequency and OP1dB of -1.5 dBm at 28 GHz. It occupies an area of $468-\mu {m}\times 465-\mu{m}$ consuming 90 mW from a 2.5 V power supply. The performance is comparable to any state-of-the-art mixers in similar silicon technologies.