M. D. Vilisova, V. P. Germogenov, I. Ponomarev, A. Tyazhev
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Detectors of γ-Quantum based on epitaxial GaAs:S, Cr layers
The results of study detector structures based on epitaxial layers of GaAs, compensated by Cr, are presented. It is shown that distribution of electric field straight in active region of the structures affected on it amplitude spectrums of γ-quantum.
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