A. Shafura, N. Azhar, I. Saurdi, M. H. Mamat, M. Uzer, M. Rusop
{"title":"纳米al掺杂ZnO薄膜的氧感特性","authors":"A. Shafura, N. Azhar, I. Saurdi, M. H. Mamat, M. Uzer, M. Rusop","doi":"10.1109/ICED.2014.7015847","DOIUrl":null,"url":null,"abstract":"Nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) was prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The oxygen-sensing characteristics were studied by varying the gas flow rate at room temperature. The electrical and structural properties of the films were carried out using current-voltage (IV) measurement, Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM), respectively. The porous nanostructures exhibited good sensitivity, of 73%, in the presence of 50 sccm of O2 flow rate. From this study, it is known that, ZnO thin film that was observed to have porous structure might enhance gas sensing performance.","PeriodicalId":143806,"journal":{"name":"2014 2nd International Conference on Electronic Design (ICED)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Oxygen-sensing characteristics of nanostructured Al-doped ZnO thin films\",\"authors\":\"A. Shafura, N. Azhar, I. Saurdi, M. H. Mamat, M. Uzer, M. Rusop\",\"doi\":\"10.1109/ICED.2014.7015847\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) was prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The oxygen-sensing characteristics were studied by varying the gas flow rate at room temperature. The electrical and structural properties of the films were carried out using current-voltage (IV) measurement, Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM), respectively. The porous nanostructures exhibited good sensitivity, of 73%, in the presence of 50 sccm of O2 flow rate. From this study, it is known that, ZnO thin film that was observed to have porous structure might enhance gas sensing performance.\",\"PeriodicalId\":143806,\"journal\":{\"name\":\"2014 2nd International Conference on Electronic Design (ICED)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 2nd International Conference on Electronic Design (ICED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICED.2014.7015847\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Electronic Design (ICED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICED.2014.7015847","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Oxygen-sensing characteristics of nanostructured Al-doped ZnO thin films
Nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) was prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The oxygen-sensing characteristics were studied by varying the gas flow rate at room temperature. The electrical and structural properties of the films were carried out using current-voltage (IV) measurement, Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM), respectively. The porous nanostructures exhibited good sensitivity, of 73%, in the presence of 50 sccm of O2 flow rate. From this study, it is known that, ZnO thin film that was observed to have porous structure might enhance gas sensing performance.