纳米光子集成电路的研究进展

T. Yatsui, G. Yi, M. Ohtsu
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引用次数: 1

摘要

本文综述了利用光学近场相互作用制备纳米光子器件的最新进展。ZnO纳米晶具有较高的激子结合能和较高的振子强度,是实现此类器件室温工作的潜在理想元件。为了证实ZnO的这种有前途的光学性质,我们研究了ZnO纳米棒双量子阱结构(DQWs)的近场时间分辨光谱。首先,我们观察到dqw在共振耦合激子态之间的居群的章动,其中近场相互作用的耦合强度随着分离的增加呈指数下降。此外,我们通过控制共振激子态之间的偶极子禁止光能转移,成功地演示了与门操作。我们的研究结果为纳米光子器件的设计提供了标准。本文描述的孤立dqw的时间分辨近场光谱的成功是实现实用的纳米尺度光子开关和相关器件的有希望的一步。
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Progress in developing nanophotonic integrated circuits
We review recent progress in the development of nanophotonic devices using the optical near-field interaction. ZnO nanocrystallites are potentially ideal components for realizing room-temperature operation of such devices due to their high exciton-binding energy and great oscillator strength. To confirm this promising optical property of ZnO, we examined the near-field time-resolved spectroscopy of ZnO nanorod double-quantum-well structures (DQWs). First, we observed the nutation of the population between the resonantly coupled exciton states of DQWs, in which the coupling strength of the near-field interaction was found to decrease exponentially as the separation increased. Furthermore, we successfully demonstrated the AND-gate operation by controlling a dipole-forbidden optical energy transfer among resonant exciton states. Our results provide criteria for designing nanophotonic devices. The success of time-resolved near-field spectroscopy of isolated DQWs described here is a promising step toward realizing a practical nanometerscale photonic switch and related devices.
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