{"title":"双栅mosfet表面粗糙度效应的全三维实空间模拟","authors":"C. Buran, M. Pala, M. Mouis, S. Poli","doi":"10.1109/IWCE.2009.5091115","DOIUrl":null,"url":null,"abstract":"We present numerical simulations of double-gate (DG)-MOSFETs based on a full-3D self-consistent Poisson-Schrodinger algorithm within the real-space non equilibrium Green's function (NEGF) approach. We include a geometrical description of surface roughness (SR) via an exponential auto-correlation law. In order to simulate rough planar structures we adopt periodic boundary conditions along one of the transverse directions. Transfer characteristics are computed for different realistic values of the root mean square (RMS) of spatial fluctuations whereas SR-limited mobility, which is extracted from effective mobility after subtraction of the ballistic component, presents a non monotonic dependence on the inversion charge density.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Full-3D Real-Space Simulation of Surface-Roughness Effects in Double-Gate MOSFETs\",\"authors\":\"C. Buran, M. Pala, M. Mouis, S. Poli\",\"doi\":\"10.1109/IWCE.2009.5091115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present numerical simulations of double-gate (DG)-MOSFETs based on a full-3D self-consistent Poisson-Schrodinger algorithm within the real-space non equilibrium Green's function (NEGF) approach. We include a geometrical description of surface roughness (SR) via an exponential auto-correlation law. In order to simulate rough planar structures we adopt periodic boundary conditions along one of the transverse directions. Transfer characteristics are computed for different realistic values of the root mean square (RMS) of spatial fluctuations whereas SR-limited mobility, which is extracted from effective mobility after subtraction of the ballistic component, presents a non monotonic dependence on the inversion charge density.\",\"PeriodicalId\":443119,\"journal\":{\"name\":\"2009 13th International Workshop on Computational Electronics\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 13th International Workshop on Computational Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2009.5091115\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 13th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2009.5091115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Full-3D Real-Space Simulation of Surface-Roughness Effects in Double-Gate MOSFETs
We present numerical simulations of double-gate (DG)-MOSFETs based on a full-3D self-consistent Poisson-Schrodinger algorithm within the real-space non equilibrium Green's function (NEGF) approach. We include a geometrical description of surface roughness (SR) via an exponential auto-correlation law. In order to simulate rough planar structures we adopt periodic boundary conditions along one of the transverse directions. Transfer characteristics are computed for different realistic values of the root mean square (RMS) of spatial fluctuations whereas SR-limited mobility, which is extracted from effective mobility after subtraction of the ballistic component, presents a non monotonic dependence on the inversion charge density.
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