{"title":"基于12μW npn的温度传感器，在0.18μm BCD CMOS中具有18.4pJ的K2 FOM","authors":"Long Xu, J. Huijsing, K. Makinwa","doi":"10.1109/IWASI.2017.7974246","DOIUrl":null,"url":null,"abstract":"This paper presents an NPN-based temperature sensor intended for the temperature compensation of the metal shunt resistor of an integrated current sensing system. The sensor was implemented in a 0.18 HV BCD CMOS technology and occupies 0.16mm<sup>2</sup> After a one-point trim, its inaccuracy is less than ±0.4°C over the industrial temperature range (−40°C to 85°C). It also achieves 14.8niK resolution in a 7ms conversion time while consuming 12μm. This results in a resolution FOM of 18.4pJ·K<sup>2</sup> the lowest ever reported for an NPN-based sensor.","PeriodicalId":332606,"journal":{"name":"2017 7th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 12μW NPN-based temperature sensor with a 18.4pJ K2 FOM in 0.18μm BCD CMOS\",\"authors\":\"Long Xu, J. Huijsing, K. Makinwa\",\"doi\":\"10.1109/IWASI.2017.7974246\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an NPN-based temperature sensor intended for the temperature compensation of the metal shunt resistor of an integrated current sensing system. The sensor was implemented in a 0.18 HV BCD CMOS technology and occupies 0.16mm<sup>2</sup> After a one-point trim, its inaccuracy is less than ±0.4°C over the industrial temperature range (−40°C to 85°C). It also achieves 14.8niK resolution in a 7ms conversion time while consuming 12μm. This results in a resolution FOM of 18.4pJ·K<sup>2</sup> the lowest ever reported for an NPN-based sensor.\",\"PeriodicalId\":332606,\"journal\":{\"name\":\"2017 7th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 7th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWASI.2017.7974246\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 7th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWASI.2017.7974246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 12μW NPN-based temperature sensor with a 18.4pJ K2 FOM in 0.18μm BCD CMOS
This paper presents an NPN-based temperature sensor intended for the temperature compensation of the metal shunt resistor of an integrated current sensing system. The sensor was implemented in a 0.18 HV BCD CMOS technology and occupies 0.16mm2 After a one-point trim, its inaccuracy is less than ±0.4°C over the industrial temperature range (−40°C to 85°C). It also achieves 14.8niK resolution in a 7ms conversion time while consuming 12μm. This results in a resolution FOM of 18.4pJ·K2 the lowest ever reported for an NPN-based sensor.
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