The determination of interfacial and bulk properties of gold in m.o.s. structures using quasiequilibrium and non-steady-state linear voltage-ramp techniques

The effect of gold recombination centres on the trapping state at the Si-SiO2interface, and in the bulk, has been studied. The technique involves applying a linear voltage-ramp to the m.o.s. device and measuring the resulting I/V characteristic. From the quasiequilibrium I/V curves, it is apparent that gold-doping produces a pronounced peak in the interfacial trap distribution occuring at energy Ev + 0.6eV with a density of Nss = 2.5 × 1011(cm2eV)−1. Subsequent non-steady-state I/V measurements are used to study the bulk recombination properties of gold, and thus determine a value for the capture cross-section (σp ≃ 1.1 × 10−15 cm2).