{"title":"氮污染对溅射铝/硅金属薄膜沉积可靠性的影响","authors":"J. Klema, R. Pyle, E. Domangue","doi":"10.1109/IRPS.1984.362012","DOIUrl":null,"url":null,"abstract":"Aluminum/Silicon (Al/Si) sputtered metal films for MOS integrated circuit metalization deposited under conditions of nitrogen contamination coupled with a subsequent silicon nitride (Si3N4) passivation can seriously impact product relialility. The reliability implications of this sputtered metallization process will be discussed. The discussion will include film characteristics and structure, description f the failure mechanism, life modeling, accelerated testing, and electromigration behavior.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"46","resultStr":"{\"title\":\"Reliability Implications of Nitrogen Contamination During Deposition of Sputtered Aluminum/Silicon Metal Films\",\"authors\":\"J. Klema, R. Pyle, E. Domangue\",\"doi\":\"10.1109/IRPS.1984.362012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Aluminum/Silicon (Al/Si) sputtered metal films for MOS integrated circuit metalization deposited under conditions of nitrogen contamination coupled with a subsequent silicon nitride (Si3N4) passivation can seriously impact product relialility. The reliability implications of this sputtered metallization process will be discussed. The discussion will include film characteristics and structure, description f the failure mechanism, life modeling, accelerated testing, and electromigration behavior.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"46\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362012\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability Implications of Nitrogen Contamination During Deposition of Sputtered Aluminum/Silicon Metal Films
Aluminum/Silicon (Al/Si) sputtered metal films for MOS integrated circuit metalization deposited under conditions of nitrogen contamination coupled with a subsequent silicon nitride (Si3N4) passivation can seriously impact product relialility. The reliability implications of this sputtered metallization process will be discussed. The discussion will include film characteristics and structure, description f the failure mechanism, life modeling, accelerated testing, and electromigration behavior.
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