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引用次数: 1

摘要

我讨论了电子-电子相互作用对半导体器件中经典介观现象的影响,正如众所周知的声子电导率振荡在隧道结中所表现的那样。中心思想是认识到振荡振幅的温度依赖性包含了所研究材料中电子-电子散射速率的直接和明确的信息。要发展的定量理论和基于该理论的器件建模应该能够对电子-电子相互作用进行独特的表征,提取与重要半导体器件运行相关的参数。
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Electron electron interaction and classical mesoscopic phenomena in semiconductors
I discuss the effect of electron-electron interaction on classical mesoscopic phenomena in semiconductor devices, as manifested by the well-known phonon conductivity oscillations in tunnel junctions. The central idea is the realization that the temperature dependence of the oscillation amplitude contains a direct and unambiguous information about the rate of electron-electron scattering in the material studied. Quantitative theory to be developed and device modeling based on this theory should enable a unique characterization of electron-electron interaction, extracting parameters relevant to the operation of important semiconductor devices.
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