相变随机存取存储器的改进SPICE宏模型

2009 International Symposium on VLSI Design, Automation and Test Pub Date : 2009-04-28 DOI:10.1109/VDAT.2009.5158113

Huan-Lin Chang, Hung-Chih Chang, Shang-Chi Yang, Hsi-Chun Tsai, Hsuan-Chih Li, C. Liu

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引用次数: 9

摘要

提出了一种改进的SPICE相变随机存取存储器(PCRAM)宏模型。基于[1]中基于电路的模型架构，本工作的新颖性在于:(1)精确建模包括回闪现象的电流-电压(I-V)图，(2)解决下降沿问题以避免PCRAM状态的误表示，以及(3)校准PCRAM电位多电平(ML)操作的结晶时间。

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Improved SPICE macromodel of phase change random access memory

This paper presents an improved SPICE macromodel of phase change random access memory (PCRAM). Based on the circuit-based model architecture in [1], the novelty of this work lies in (1) accurate modeling the current-voltage (I-V) plot including the snapback phenomenon, and (2) solution to the falling edge problem to avoid misrepresentation of the PCRAM state, and (3) calibration of the crystallization time for potential multilevel (ML) operation of the PCRAM.

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2009 International Symposium on VLSI Design, Automation and Test

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