基于石墨烯的有效计算研究

N. C. Laurenciu, S. Cotofana
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引用次数: 1

摘要

随着CMOS特征尺寸向原子尺寸发展,不合理的静态功率、可靠性和经济影响正在加剧,促使人们研究新的材料、器件和/或计算范式。在这种情况下,石墨烯纳米带(gnr)由于石墨烯优异的电子特性,可以作为碳基纳米电子学的基本块。在本文中,我们提出了两种主要途径,即基于石墨烯场效应管和基于GNR的石墨烯计算。第一种方法是保守的,专注于实现基于石墨烯FET晶体管的开关作为MOSFET的替代品,以保持最先进的逻辑布尔代数范式设计方法。第二项研究遵循不同的思路,通过更好地利用石墨烯的传导特性,寻求能够提供更复杂行为的基于gnr的结构。我们首先讨论了基于石墨烯纳米带(GNR)的场效应晶体管(gnrfet)和基于隧道GNR的晶体管(gnrtfet)及其作为布尔门实现的基础元件的应用。随后,我们提出了基于GNR的结构,可以直接计算布尔函数,例如NAND, XOR,仅通过一个GNR和一种方式将它们互补排列在能量有效门中。为了深入了解这两种途径的潜力,我们将逆变器作为讨论工具,并从面积和能耗方面评估设计。基于gnr的结构比基于gnrfet和基于gnrfet的设计分别小15倍到104倍和230倍的延迟,功率分别小6到7和4个数量级。此外,与CMOS 7纳米布尔门相比,基于gnr的设计具有高达6倍的延迟,高达2个数量级的有效面积和总功耗。我们的分析证实,基于gnr的替代设计范式超越了传统的基于开关的方法,并更好地利用了石墨烯的固有特性,更适合未来的碳基纳米电子学。
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On Effective Graphene Based Computing
With CMOS feature size heading towards atomic dimensions, unjustifiable static power, reliability, and economic implications are exacerbating, prompting for research on new materials, devices, and/or computation paradigms. Within this context, Graphene Nanoribbons (GNRs), owing to graphene's excellent electronic properties, may serve as basic blocks for carbon-based nanoelectronics. In this paper, we present the two main avenues, i.e., graphene FET- and GNR- based, undertaken towards graphene based computing. The first approach is conservative and focuses on the realization of graphene FET transistor based switches as MOSFET replacements to maintain the state of the art logic Boolean algebra paradigm design methodology. The second one follows a different line of thinking and seeks GNR-based structures able to provide more complex behaviours by making better use of graphene's conduction properties. We first discuss Graphene Nanoribbon (GNR) based field Effect Transistors (GNRFETs) and Tunnelling GNR based Transistors (GNRTFETs) and their utilization as underlying elements for Boolean gate implementations. Subsequently, we present GNR-based structures that can directly compute Boolean functions, e.g., NAND, XOR, by means of one GNR only and a way to complementary arrange them in energy effective gates. To get inside into the potential of the two avenues we consider an inverter as discussion vehicle and evaluate the designs in terms of area and energy consumption. The GNR-based structure outperforms its counterparts by 15× up to 104× and 230× smaller delay and 6 to 7 and 4 orders of magnitude smaller power than the GNRFET-and GNRTFET- based designs, respectively. Moreover, when compared with CMOS 7 nm Boolean gates GNR-based desgns exhibit up to 6× smaller delay, and up to 2 orders of magnitude smaller active area, and total power consumption. Our analysis confirms that the alternative GNR-based design paradigm, which transcends the traditional switch based approach and takes better advantage of graphene intrinsicnproperties, is better suited for future carbon based nanoelectronics.
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