{"title":"2.7伏CMOS宽带低噪声放大器","authors":"Janssens, Steyaert, Miyakawa","doi":"10.1109/VLSIC.1997.623820","DOIUrl":null,"url":null,"abstract":"A full-CMOS broadband low-noise amplifier for application in a GSM receiver front-end is presented. The circuit employs a topology which does not require any tuning or trimming. The amplifier provides a forward gain of 24 dB between 0.9 GHz and 1 GHz, while the -3dB band ranges from 420 MHz to 1.2 GHz. The noise figure is less than 2.7 dB in the whole 300 MHz frequency band between 0.8 GHz and 1.1 GHz. Reverse isolation is better than 43.5 dB over the full measuring range. The prototype has been implemented in a 0 . 4 ~ CMOS technology and consumes 35 mW from a 2.7 Volt supply.","PeriodicalId":175678,"journal":{"name":"Symposium 1997 on VLSI Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":"{\"title\":\"A 2.7 Volt CMOS Broadband Low Noise Amplifier\",\"authors\":\"Janssens, Steyaert, Miyakawa\",\"doi\":\"10.1109/VLSIC.1997.623820\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A full-CMOS broadband low-noise amplifier for application in a GSM receiver front-end is presented. The circuit employs a topology which does not require any tuning or trimming. The amplifier provides a forward gain of 24 dB between 0.9 GHz and 1 GHz, while the -3dB band ranges from 420 MHz to 1.2 GHz. The noise figure is less than 2.7 dB in the whole 300 MHz frequency band between 0.8 GHz and 1.1 GHz. Reverse isolation is better than 43.5 dB over the full measuring range. The prototype has been implemented in a 0 . 4 ~ CMOS technology and consumes 35 mW from a 2.7 Volt supply.\",\"PeriodicalId\":175678,\"journal\":{\"name\":\"Symposium 1997 on VLSI Circuits\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"36\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Symposium 1997 on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1997.623820\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1997 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1997.623820","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A full-CMOS broadband low-noise amplifier for application in a GSM receiver front-end is presented. The circuit employs a topology which does not require any tuning or trimming. The amplifier provides a forward gain of 24 dB between 0.9 GHz and 1 GHz, while the -3dB band ranges from 420 MHz to 1.2 GHz. The noise figure is less than 2.7 dB in the whole 300 MHz frequency band between 0.8 GHz and 1.1 GHz. Reverse isolation is better than 43.5 dB over the full measuring range. The prototype has been implemented in a 0 . 4 ~ CMOS technology and consumes 35 mW from a 2.7 Volt supply.
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