{"title":"p-n结中掺杂水平的红外高空间分辨率测定","authors":"J. White, J. Smith","doi":"10.1049/IJ-SSED:19780051","DOIUrl":null,"url":null,"abstract":"A nondestructive infrared emission-measurement technique, which allows point-by-point determination of the effective doping level within the depletion layer of a reverse-biased p-n junction, is described. The method is an alternative to normal capacitance-voltage techniques which give a value averaged over the entire junction area. With this technique a spatial resolution of about 15 μm is obtainable and a further advantage is that it is unaffected by high reverse currents.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"149 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Infrared high spatial-resolution determination of doping levels in p-n junctions\",\"authors\":\"J. White, J. Smith\",\"doi\":\"10.1049/IJ-SSED:19780051\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A nondestructive infrared emission-measurement technique, which allows point-by-point determination of the effective doping level within the depletion layer of a reverse-biased p-n junction, is described. The method is an alternative to normal capacitance-voltage techniques which give a value averaged over the entire junction area. With this technique a spatial resolution of about 15 μm is obtainable and a further advantage is that it is unaffected by high reverse currents.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"149 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19780051\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19780051","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Infrared high spatial-resolution determination of doping levels in p-n junctions
A nondestructive infrared emission-measurement technique, which allows point-by-point determination of the effective doping level within the depletion layer of a reverse-biased p-n junction, is described. The method is an alternative to normal capacitance-voltage techniques which give a value averaged over the entire junction area. With this technique a spatial resolution of about 15 μm is obtainable and a further advantage is that it is unaffected by high reverse currents.
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