M. Sometani, Y. Iwahashi, M. Okamoto, S. Harada, Y. Yonezawa, H. Okumura, H. Yano
{"title":"市售碳化硅mosfet中交流栅极偏置应力降低漏极电流的评估","authors":"M. Sometani, Y. Iwahashi, M. Okamoto, S. Harada, Y. Yonezawa, H. Okumura, H. Yano","doi":"10.23919/ISPSD.2017.7988987","DOIUrl":null,"url":null,"abstract":"In this study, we constructed a novel measurement setup with a large current rating to measure fast Id change, and evaluated the decrease in Id due to positive AC gate bias, using commercially available SiC MOSFETs. In addition, by comparing the obtained fast 7d change results with the threshold voltage (Vth) shift measured by a conventional DC gate stress test, we verified that the conventional DC stress test is not sufficient for accurate evaluation of the Vth shift.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Evaluation of drain current decrease by AC gate bias stress in commercially available SiC MOSFETs\",\"authors\":\"M. Sometani, Y. Iwahashi, M. Okamoto, S. Harada, Y. Yonezawa, H. Okumura, H. Yano\",\"doi\":\"10.23919/ISPSD.2017.7988987\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, we constructed a novel measurement setup with a large current rating to measure fast Id change, and evaluated the decrease in Id due to positive AC gate bias, using commercially available SiC MOSFETs. In addition, by comparing the obtained fast 7d change results with the threshold voltage (Vth) shift measured by a conventional DC gate stress test, we verified that the conventional DC stress test is not sufficient for accurate evaluation of the Vth shift.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988987\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988987","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of drain current decrease by AC gate bias stress in commercially available SiC MOSFETs
In this study, we constructed a novel measurement setup with a large current rating to measure fast Id change, and evaluated the decrease in Id due to positive AC gate bias, using commercially available SiC MOSFETs. In addition, by comparing the obtained fast 7d change results with the threshold voltage (Vth) shift measured by a conventional DC gate stress test, we verified that the conventional DC stress test is not sufficient for accurate evaluation of the Vth shift.
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