{"title":"基于残余副产物物理分析的热氧化4H-SiC(0001)表面晶格畸变可能来源的研究","authors":"A. D. Hatmanto, K. Kita","doi":"10.7567/ssdm.2019.k-6-05","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"217 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of the Possible Origins of Lattice Distortion at the Surface of Thermally-Oxidized 4H-SiC (0001) based on the Physical Analysis of Remained Byproducts\",\"authors\":\"A. D. Hatmanto, K. Kita\",\"doi\":\"10.7567/ssdm.2019.k-6-05\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":117226,\"journal\":{\"name\":\"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials\",\"volume\":\"217 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.7567/ssdm.2019.k-6-05\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/ssdm.2019.k-6-05","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of the Possible Origins of Lattice Distortion at the Surface of Thermally-Oxidized 4H-SiC (0001) based on the Physical Analysis of Remained Byproducts