史密斯-珀塞尔辐射使用单尖端场发射器

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1116/1.1851536

Y. Neo, Y. Suzuki, K. Sagae, H. Shimawaki, H. Mimura

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引用次数: 10

摘要

Smith-Purcell辐射(SPR)是在低功率水平下由单尖端Si场发射极产生的。采用反应离子刻蚀和热氧化锐化技术制备了单尖端硅场发射体。辐射测量是通过可见光谱中的观察口进行的。在300 ~ 900 nm波长、20 ~ 200 nA束流和25 ~ 30 kV加速电压下，成功地观察到了SPR。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Smith-Purcell radiation using a single-tip field emitter

Smith-Purcell radiation (SPR) was generated from a single-tip Si field emitter at a low power level. Single-tip Si field emitters were fabricated using reactive ion etching and thermal oxidation sharpening. Radiation measurements were performed through a viewing port in the visible spectra. SPR was successfully observed at 300-900 nm wavelength, 20-200 nA beam current and 25-30 kV accelerating voltage.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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