Abhishek A. Sharma, M. Noman, M. Skowronski, J. Bain
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Comparison of electric field dependent activation energy for electroformation in TaOx and TiOx based RRAMs
Oxide based resistive switching memories are considered to be one of the front-runners for the next generation non-volatile memories. Forming, the critical one time programming process, is not well understood. In this work, we try to understand the dynamics of forming process in two model systems - TaOx and TiOx, and compare the similarities and the universality in its control parameters. After comparing the time, voltage and temperature dependent dynamics, we find that a 1/E (E being electric field) dependence causes the activation energy to reduce by more than an order of magnitude.
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