{"title":"铁磁半导体微带线的慢波特性","authors":"H. Ogawa, T. Itoh","doi":"10.1109/MWSYM.1986.1132110","DOIUrl":null,"url":null,"abstract":"A new slow-wave microstrip line made of a ferromagnetic semiconductor (FMS) substrate is proposed and its characteristics discussed. It is shown that this structure has more desirable and flexible guided wave properties than the conventional metal-insulator-semiconductor (MIS) microstrip line.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"Slow-Wave Characteristics of Ferromagnetic Semiconductor Microstrip Line\",\"authors\":\"H. Ogawa, T. Itoh\",\"doi\":\"10.1109/MWSYM.1986.1132110\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new slow-wave microstrip line made of a ferromagnetic semiconductor (FMS) substrate is proposed and its characteristics discussed. It is shown that this structure has more desirable and flexible guided wave properties than the conventional metal-insulator-semiconductor (MIS) microstrip line.\",\"PeriodicalId\":109161,\"journal\":{\"name\":\"1986 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1986.1132110\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1986.1132110","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Slow-Wave Characteristics of Ferromagnetic Semiconductor Microstrip Line
A new slow-wave microstrip line made of a ferromagnetic semiconductor (FMS) substrate is proposed and its characteristics discussed. It is shown that this structure has more desirable and flexible guided wave properties than the conventional metal-insulator-semiconductor (MIS) microstrip line.