C. Sandhya, A. Bastard, L. Perniola, J. Bastien, A. Toffoli, E. Henaff, A. Roule, A. Persico, B. Hyot, V. Sousa, B. De Salvo, G. Reimbold
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Analysis of the effect of boron doping on GeTe Phase Change Memories
For the first time, we evaluate the electrical behavior of boron doped GeTe Phase-Change Memories (PCM). Our results demonstrate 25% RESET current reduction and excellent resistance contrast between SET and RESET states with B doping. A further benefit of controlled SET dynamics makes it favorable for MLC applications. Finally, we demonstrate that boron doped GeTe phase change materials maintain good device endurance reliability.
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