GaAs Power HBT: COOL Device With HOT Performance

IEEE Princeton Section Sarnoff Symposium Pub Date : 1995-04-28 DOI:10.1109/SARNOF.1995.636670

F. Ali

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引用次数: 0

摘要

近年来，用于微波功率应用的AlGaAs/GaAs异质结双极晶体管(HBTs)在输出功率和功率附加效率(PAE)方面取得了显著的进步。本文概述了高效率、砷化镓HBT单元和功率放大器的设计考虑。介绍了几种用于窄带和宽带应用的高效HBT功率MMIC放大器的性能结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaAs Power HBT: COOL Device With HOT Performance

AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) designed for microwave power applicatims have shown marked improvements in output power and power-added efficiency (PAE) during recent years. This paper provides a synopsis of the design considerations for high efficiency, GaAs HBT unit-cell and power amplifiers. Performance results of several high efficiency HBT power MMIC amplifiers designed for narrowband and broadband applications are also be presented.

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IEEE Princeton Section Sarnoff Symposium

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