Mo Zhi-qiang, G. Dong, H. Younan, Z. Siping, Xing Zhenxiang
{"title":"硅片表面空气中硼磷污染的TOF-SIMS分析","authors":"Mo Zhi-qiang, G. Dong, H. Younan, Z. Siping, Xing Zhenxiang","doi":"10.1109/SMELEC.2006.380720","DOIUrl":null,"url":null,"abstract":"Airborne boron and phosphorus contaminations on wafer surface has been analysed by TOF-SIMS. A known boron and phosphorus concentration BPSG sample was used as reference for the calibration of the TOF-SIMS. The detection limit reaches 1E8 at/cm2 for boron and 1E10 at/cm2 for phosphorus. This method is easy to applied and no sample preparation required. So TOF- SIMS is a very good monitoring technique for airborne boron and phosphorus on wafer surface.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of Airborne Boron and Phosphorus Contaminations on Wafer Surface by TOF-SIMS\",\"authors\":\"Mo Zhi-qiang, G. Dong, H. Younan, Z. Siping, Xing Zhenxiang\",\"doi\":\"10.1109/SMELEC.2006.380720\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Airborne boron and phosphorus contaminations on wafer surface has been analysed by TOF-SIMS. A known boron and phosphorus concentration BPSG sample was used as reference for the calibration of the TOF-SIMS. The detection limit reaches 1E8 at/cm2 for boron and 1E10 at/cm2 for phosphorus. This method is easy to applied and no sample preparation required. So TOF- SIMS is a very good monitoring technique for airborne boron and phosphorus on wafer surface.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.380720\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380720","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of Airborne Boron and Phosphorus Contaminations on Wafer Surface by TOF-SIMS
Airborne boron and phosphorus contaminations on wafer surface has been analysed by TOF-SIMS. A known boron and phosphorus concentration BPSG sample was used as reference for the calibration of the TOF-SIMS. The detection limit reaches 1E8 at/cm2 for boron and 1E10 at/cm2 for phosphorus. This method is easy to applied and no sample preparation required. So TOF- SIMS is a very good monitoring technique for airborne boron and phosphorus on wafer surface.
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