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引用次数: 7
摘要
本文提出了一种用于长沟道梯度沟道(GC)绝缘子上硅(SOI) nmosfet模拟仿真的连续模型。该模型基于两个具有不同特性的传统全耗尽(FD) SOI nMOSFET的一系列关联，代表GC nMOSFET通道区域的每个部分。MEDICI二维数值模拟和实验结果验证了该模型的有效性。
A physically-based continuous analytical graded-channel SOI nMOSFET model for analog applications
In this work a continuous model for analog simulation of long-channel Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs is presented. The model is based in a series association of two conventional fully-depleted (FD) SOI nMOSFETs with different characteristics, representing each part of the GC nMOSFET channel region. MEDICI numerical bidimensional simulations and experimental results are used to validate the proposed model.
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