{"title":"采用0.18 μm CMOS技术的低相位噪声0.9 / 1.8 GHz双频LC压控振荡器","authors":"Jinhyun Kim, Jeongsoo Park, Jeong‐Geun Kim","doi":"10.23919/ELINFOCOM.2018.8330717","DOIUrl":null,"url":null,"abstract":"This paper presents a low phase noise dual-band LC voltage controlled oscillator (VCO) in 0.18 ßm CMOS technology. The proposed CMOS LC VCO is realized employing varactor diodes, a switched capacitor array and a switched differential inductor, which operates the dual-band operation. The CMOS LC VCO is also implemented with low phase noise performance using two series inductors at common source nodes. The measured phase noises at 0.9 GHz and 1.8 GHz frequency bands are −135 dBc/Hz and − 126 dBc/Hz at 1 MHz offset. The chip size is 1.3×1.4 mm2, including pads.","PeriodicalId":413646,"journal":{"name":"2018 International Conference on Electronics, Information, and Communication (ICEIC)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A low phase noise 0.9 / 1.8 GHz dual-band LC VCO in 0.18 μm CMOS technology\",\"authors\":\"Jinhyun Kim, Jeongsoo Park, Jeong‐Geun Kim\",\"doi\":\"10.23919/ELINFOCOM.2018.8330717\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a low phase noise dual-band LC voltage controlled oscillator (VCO) in 0.18 ßm CMOS technology. The proposed CMOS LC VCO is realized employing varactor diodes, a switched capacitor array and a switched differential inductor, which operates the dual-band operation. The CMOS LC VCO is also implemented with low phase noise performance using two series inductors at common source nodes. The measured phase noises at 0.9 GHz and 1.8 GHz frequency bands are −135 dBc/Hz and − 126 dBc/Hz at 1 MHz offset. The chip size is 1.3×1.4 mm2, including pads.\",\"PeriodicalId\":413646,\"journal\":{\"name\":\"2018 International Conference on Electronics, Information, and Communication (ICEIC)\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Electronics, Information, and Communication (ICEIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ELINFOCOM.2018.8330717\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Electronics, Information, and Communication (ICEIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ELINFOCOM.2018.8330717","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low phase noise 0.9 / 1.8 GHz dual-band LC VCO in 0.18 μm CMOS technology
This paper presents a low phase noise dual-band LC voltage controlled oscillator (VCO) in 0.18 ßm CMOS technology. The proposed CMOS LC VCO is realized employing varactor diodes, a switched capacitor array and a switched differential inductor, which operates the dual-band operation. The CMOS LC VCO is also implemented with low phase noise performance using two series inductors at common source nodes. The measured phase noises at 0.9 GHz and 1.8 GHz frequency bands are −135 dBc/Hz and − 126 dBc/Hz at 1 MHz offset. The chip size is 1.3×1.4 mm2, including pads.
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