延迟时间和交流因素对pmosfet负偏置温度不稳定性的影响

Jih-San Li, Main-gwo Chen, P. Juan, K. Su
{"title":"延迟时间和交流因素对pmosfet负偏置温度不稳定性的影响","authors":"Jih-San Li, Main-gwo Chen, P. Juan, K. Su","doi":"10.1109/IRWS.2006.305202","DOIUrl":null,"url":null,"abstract":"In this study, the delay-dependent negative bias temperature instability (NBTI) was performed and a power law relationship between the lifetime and the delay time was found. The AC lifetimes under dynamic stress as a function of duty cycle and frequency were also investigated. It was observed that the time-to-failure (TTF) has an exponential dependence on duty ratio and a power law dependency on frequency. An accurate AC model incorporated with duty ratio and frequency is proposed. The mechanisms due to the effect of recovery are discussed","PeriodicalId":199223,"journal":{"name":"2006 IEEE International Integrated Reliability Workshop Final Report","volume":"234 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Effects of Delay Time and AC Factors on Negative Bias Temperature Instability of PMOSFETs\",\"authors\":\"Jih-San Li, Main-gwo Chen, P. Juan, K. Su\",\"doi\":\"10.1109/IRWS.2006.305202\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, the delay-dependent negative bias temperature instability (NBTI) was performed and a power law relationship between the lifetime and the delay time was found. The AC lifetimes under dynamic stress as a function of duty cycle and frequency were also investigated. It was observed that the time-to-failure (TTF) has an exponential dependence on duty ratio and a power law dependency on frequency. An accurate AC model incorporated with duty ratio and frequency is proposed. The mechanisms due to the effect of recovery are discussed\",\"PeriodicalId\":199223,\"journal\":{\"name\":\"2006 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"234 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.2006.305202\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2006.305202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

本研究对延迟相关负偏置温度不稳定性(NBTI)进行了分析,发现了寿命与延迟时间之间的幂律关系。研究了在动应力作用下交流电的寿命与占空比和频率的关系。观察到故障时间(TTF)与占空比呈指数关系,与频率呈幂律关系。提出了一种结合占空比和频率的精确交流模型。讨论了由于回收效应而产生的机理
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Effects of Delay Time and AC Factors on Negative Bias Temperature Instability of PMOSFETs
In this study, the delay-dependent negative bias temperature instability (NBTI) was performed and a power law relationship between the lifetime and the delay time was found. The AC lifetimes under dynamic stress as a function of duty cycle and frequency were also investigated. It was observed that the time-to-failure (TTF) has an exponential dependence on duty ratio and a power law dependency on frequency. An accurate AC model incorporated with duty ratio and frequency is proposed. The mechanisms due to the effect of recovery are discussed
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Product Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOS Lithography CD Variation effects on LFNDMOS Transistor Hot-Carrier Degradation Study of Electrically Programmable Fuses through Series of I-V Measurements A Critical Failure Source in 65nm-MLC NOR Flash Memory Incorporating Co-Salicidation Process Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1