{"title":"用于电视调谐器的宽带CMOS低噪声放大器","authors":"Youchun Liao, Zhangwen Tang, Hao Min","doi":"10.1109/ASSCC.2006.357900","DOIUrl":null,"url":null,"abstract":"In this paper, a wide-band CMOS low-noise amplifier (LNA) is presented, in which the thermal noise of the input MOSFET is canceled exploiting a noise-canceling technique. The LNA is designed under input/output impedance matching condition. And its noise figure (NF) and linearity analysis are investigated particularly. The LNA chip is implemented in a 0.25-mum 1P5M RF CMOS process. Measurement results show that in 50-860 MHz, the gain is about 13.4 dB, the NF is from 2.4 dB to 3.5 dB, and the input-referred third-order intercept point (IIP3) is 3.3 dBm. The chip consumes 30 mW at 2.5-V power supply and the core size is only 0.15 mm times 0.18 mm.","PeriodicalId":142478,"journal":{"name":"2006 IEEE Asian Solid-State Circuits Conference","volume":"622 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A Wide-band CMOS Low-Noise Amplifier for TV Tuner Applications\",\"authors\":\"Youchun Liao, Zhangwen Tang, Hao Min\",\"doi\":\"10.1109/ASSCC.2006.357900\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a wide-band CMOS low-noise amplifier (LNA) is presented, in which the thermal noise of the input MOSFET is canceled exploiting a noise-canceling technique. The LNA is designed under input/output impedance matching condition. And its noise figure (NF) and linearity analysis are investigated particularly. The LNA chip is implemented in a 0.25-mum 1P5M RF CMOS process. Measurement results show that in 50-860 MHz, the gain is about 13.4 dB, the NF is from 2.4 dB to 3.5 dB, and the input-referred third-order intercept point (IIP3) is 3.3 dBm. The chip consumes 30 mW at 2.5-V power supply and the core size is only 0.15 mm times 0.18 mm.\",\"PeriodicalId\":142478,\"journal\":{\"name\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"622 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2006.357900\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2006.357900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
摘要
本文设计了一种宽带CMOS低噪声放大器(LNA)，该放大器利用消噪技术消除了输入MOSFET的热噪声。在输入/输出阻抗匹配条件下设计LNA。并对其噪声系数(NF)和线性度分析进行了详细的研究。LNA芯片采用0.25 μ m 1P5M RF CMOS工艺实现。测量结果表明，在50 ~ 860mhz频段，增益约为13.4 dB, NF范围为2.4 ~ 3.5 dB，输入参考三阶截距(IIP3)为3.3 dBm。该芯片在2.5 v电源下功耗为30mw，核心尺寸仅为0.15 mm × 0.18 mm。
A Wide-band CMOS Low-Noise Amplifier for TV Tuner Applications
In this paper, a wide-band CMOS low-noise amplifier (LNA) is presented, in which the thermal noise of the input MOSFET is canceled exploiting a noise-canceling technique. The LNA is designed under input/output impedance matching condition. And its noise figure (NF) and linearity analysis are investigated particularly. The LNA chip is implemented in a 0.25-mum 1P5M RF CMOS process. Measurement results show that in 50-860 MHz, the gain is about 13.4 dB, the NF is from 2.4 dB to 3.5 dB, and the input-referred third-order intercept point (IIP3) is 3.3 dBm. The chip consumes 30 mW at 2.5-V power supply and the core size is only 0.15 mm times 0.18 mm.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
