M. Hirayama, T. Matsukawa, N. Tsubouchi, H. Nakata
{"title":"高压低温氧化膜随时间介电击穿测量","authors":"M. Hirayama, T. Matsukawa, N. Tsubouchi, H. Nakata","doi":"10.1109/IRPS.1984.362034","DOIUrl":null,"url":null,"abstract":"Time dependent dielectric breakdown characteristics of the thin silicon dioxide films were automatically measured. These films were obtained from the high pressure low temperature oxidation of silicon. Breakdown failures were independent on the oxidation pressure but dependent on the oxidation temperature and film thickness. The electric field acceleration factor is estimated about 105.6/MV/cm.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"312 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Time Dependent Dielectric Breakdown Measurement of High Pressure Low Temperature Oxidized Film\",\"authors\":\"M. Hirayama, T. Matsukawa, N. Tsubouchi, H. Nakata\",\"doi\":\"10.1109/IRPS.1984.362034\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Time dependent dielectric breakdown characteristics of the thin silicon dioxide films were automatically measured. These films were obtained from the high pressure low temperature oxidation of silicon. Breakdown failures were independent on the oxidation pressure but dependent on the oxidation temperature and film thickness. The electric field acceleration factor is estimated about 105.6/MV/cm.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"312 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362034\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362034","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Time Dependent Dielectric Breakdown Measurement of High Pressure Low Temperature Oxidized Film
Time dependent dielectric breakdown characteristics of the thin silicon dioxide films were automatically measured. These films were obtained from the high pressure low temperature oxidation of silicon. Breakdown failures were independent on the oxidation pressure but dependent on the oxidation temperature and film thickness. The electric field acceleration factor is estimated about 105.6/MV/cm.
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