{"title":"一种新型高击穿电压功率LDMOSFET结构","authors":"Doohyung Cho, G. Song, Kwangsoo Kim","doi":"10.1109/ELINFOCOM.2014.6914418","DOIUrl":null,"url":null,"abstract":"Novel power MOSFET structure based on LD-MOSFET which has no epitaxial layer is proposed in this paper. The proposed device has the breakdown voltage (BV) as 3.5 times higher than conventional LDMOSFET without increasing the resistance. Also, under the influence of wide n-drift around the oxide, it achieves relatively high Isat due to uniform electric field distribution. In this paper, Silvaco T-CAD tool is utilized to analyze the each device's electrical characteristics.","PeriodicalId":360207,"journal":{"name":"2014 International Conference on Electronics, Information and Communications (ICEIC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A novel power LDMOSFET structure with high breakdown voltage\",\"authors\":\"Doohyung Cho, G. Song, Kwangsoo Kim\",\"doi\":\"10.1109/ELINFOCOM.2014.6914418\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel power MOSFET structure based on LD-MOSFET which has no epitaxial layer is proposed in this paper. The proposed device has the breakdown voltage (BV) as 3.5 times higher than conventional LDMOSFET without increasing the resistance. Also, under the influence of wide n-drift around the oxide, it achieves relatively high Isat due to uniform electric field distribution. In this paper, Silvaco T-CAD tool is utilized to analyze the each device's electrical characteristics.\",\"PeriodicalId\":360207,\"journal\":{\"name\":\"2014 International Conference on Electronics, Information and Communications (ICEIC)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Electronics, Information and Communications (ICEIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELINFOCOM.2014.6914418\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Electronics, Information and Communications (ICEIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELINFOCOM.2014.6914418","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel power LDMOSFET structure with high breakdown voltage
Novel power MOSFET structure based on LD-MOSFET which has no epitaxial layer is proposed in this paper. The proposed device has the breakdown voltage (BV) as 3.5 times higher than conventional LDMOSFET without increasing the resistance. Also, under the influence of wide n-drift around the oxide, it achieves relatively high Isat due to uniform electric field distribution. In this paper, Silvaco T-CAD tool is utilized to analyze the each device's electrical characteristics.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
