H. Sato, K. Hata, H. Miyake, K. Hiramatsu, Y. Saito
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Selective growth of carbon nanotubes on silicon protrusions
A novel and simple process for fabrication of a carbon nanotube field emitter array is reported. Chemical vapor deposition (plasma enhanced CVD and thermal CVD) and lift-off process were used for selective growth of CNTs on the vertexes of the protrusions. The field emission measurements of the CNTs arrays were performed by taking current-voltage curves in an ultrahigh vacuum condition. It was found that the CNTs array grown by the TCVD with the Ti buffer layer gave the best FE characteristics.
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