一个简单的实现扫描隧道电位测定与标准扫描隧道显微镜

2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2017-07-01 DOI:10.1109/NANO.2017.8117420

T. Xie, M. Dreyer, D. Bowen, D. Hinkel, R. Butera, Charles Kraffit, I. Mayergoyz

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引用次数: 0

摘要

在本文中，我们提出了一种在有偏置电流流过样品的情况下局部测量表面电位的技术。该技术可以通过使用标准扫描隧道显微镜(STM)设备来实现。结果表明，该技术可用于超高真空(UHV)样品的原位表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A simple implementation of scanning tunneling potentiometry with a standard scanning tunneling microscope

In this paper, we present a technique for local measurements of the surface potential in the presence of a biasing current flow through a sample. This technique can be implemented by using standard scanning tunneling microscopy (STM) equipment. It is demonstrated that this potentiometry technique can be useful for in-situ sample characterization in ultra-high vacuum (UHV).

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2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)

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