{"title":"SiC mosfet沟道设计之比较研究:累积模式沟道与反转模式沟道","authors":"Woongje Sung, Kijeong Han, B. Baliga","doi":"10.23919/ISPSD.2017.7988996","DOIUrl":null,"url":null,"abstract":"This paper provides detailed comparison of electrical characteristics of accumulation mode and inversion mode 1.2 kV SiC MOSFETs, including performance at high temperatures (up to 200 °C). Statistical data measured from over 50 dies on 6-inch SiC wafers was used for this comparison. It is concluded that the accumulation mode SiC MOSFET provides a lower specific on-resistance than the inversion mode MOSFET due to a higher channel mobility (∼ 22 cm2/V·s) while achieving a reasonable threshold voltage (∼ 2.3 V). Based on statistical data analyses, a strong correlation between the threshold voltage and the field effect channel mobility was identified.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel\",\"authors\":\"Woongje Sung, Kijeong Han, B. Baliga\",\"doi\":\"10.23919/ISPSD.2017.7988996\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper provides detailed comparison of electrical characteristics of accumulation mode and inversion mode 1.2 kV SiC MOSFETs, including performance at high temperatures (up to 200 °C). Statistical data measured from over 50 dies on 6-inch SiC wafers was used for this comparison. It is concluded that the accumulation mode SiC MOSFET provides a lower specific on-resistance than the inversion mode MOSFET due to a higher channel mobility (∼ 22 cm2/V·s) while achieving a reasonable threshold voltage (∼ 2.3 V). Based on statistical data analyses, a strong correlation between the threshold voltage and the field effect channel mobility was identified.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988996\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988996","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
摘要
本文详细比较了1.2 kV SiC mosfet的积累模式和反转模式的电特性，包括高温(高达200°C)下的性能。从50多个6英寸SiC晶圆上测量的统计数据用于此比较。结果表明，积累模式SiC MOSFET具有较高的沟道迁移率(~ 22 cm2/V·s)，且具有合理的阈值电压(~ 2.3 V)，因此比逆变模式MOSFET具有更低的导通电阻。基于统计数据分析，阈值电压与场效应沟道迁移率之间存在很强的相关性。
A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel
This paper provides detailed comparison of electrical characteristics of accumulation mode and inversion mode 1.2 kV SiC MOSFETs, including performance at high temperatures (up to 200 °C). Statistical data measured from over 50 dies on 6-inch SiC wafers was used for this comparison. It is concluded that the accumulation mode SiC MOSFET provides a lower specific on-resistance than the inversion mode MOSFET due to a higher channel mobility (∼ 22 cm2/V·s) while achieving a reasonable threshold voltage (∼ 2.3 V). Based on statistical data analyses, a strong correlation between the threshold voltage and the field effect channel mobility was identified.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
