利用posinst模拟槽状真空室中电子云的积聚

M. Venturini, M. Furman, J. Vay, M. Pivi
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引用次数: 5

摘要

有人建议使用沟槽真空室作为限制ILC- dr中电子云积累的一种方法。我们报告了使用增强版POSINST进行的模拟,考虑了沟槽存在下的电子云动力学,并与先前对沟槽表面有效二次电子产率的估计联系起来。
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Modelling of E-cloud build-up in grooved vacuum chambers using posinst
Use of grooved vacuum chambers have been suggested as a way to limit electron cloud accumulation in the ILC- DR. We report on simulations carried out using an augmented version of POSINST, accounting for e-cloud dynamics in the presence of grooves, and make contact with previous estimates of an effective secondary electron yield for grooved surfaces.
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