{"title":"高压功率转换电路中相邻MOSFET开关操作引起MOSFET栅极电压波动的研究","authors":"T. Funaki","doi":"10.1109/EMCCOMPO.2013.6735183","DOIUrl":null,"url":null,"abstract":"The development of high voltage SiC power MOSFET has made the fast switching of high voltage possible. The high dv/dt caused by fast high voltage switching induces the difficulty of mal-operation of power MOSFET with the self turn-on phenomenon by the fluctuation of gate voltage. This phenomenon is recognized as intra EMC. This paper studies the mechanism of self turn-on phenomenon and discusses the suppression method.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A study on gate voltage fluctuation of MOSFET induced by switching operation of adjacent MOSFET in high voltage power conversion circuit\",\"authors\":\"T. Funaki\",\"doi\":\"10.1109/EMCCOMPO.2013.6735183\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development of high voltage SiC power MOSFET has made the fast switching of high voltage possible. The high dv/dt caused by fast high voltage switching induces the difficulty of mal-operation of power MOSFET with the self turn-on phenomenon by the fluctuation of gate voltage. This phenomenon is recognized as intra EMC. This paper studies the mechanism of self turn-on phenomenon and discusses the suppression method.\",\"PeriodicalId\":302757,\"journal\":{\"name\":\"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMCCOMPO.2013.6735183\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMCCOMPO.2013.6735183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A study on gate voltage fluctuation of MOSFET induced by switching operation of adjacent MOSFET in high voltage power conversion circuit
The development of high voltage SiC power MOSFET has made the fast switching of high voltage possible. The high dv/dt caused by fast high voltage switching induces the difficulty of mal-operation of power MOSFET with the self turn-on phenomenon by the fluctuation of gate voltage. This phenomenon is recognized as intra EMC. This paper studies the mechanism of self turn-on phenomenon and discusses the suppression method.
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