{"title":"45纳米技术带隙低频噪声的电路表征","authors":"P. Srinivasan, A. Marshall","doi":"10.1109/DCAS.2010.5955043","DOIUrl":null,"url":null,"abstract":"Circuit characterization for low frequency noise of a bandgap reference circuit in a 45nm CMOS process is performed here. It is determined that the noise at lower frequencies follow 1/fγ spectra where 1<γ<2. This flattens off as thermal noise for frequencies greater than 1 KHz. Substantial variation in bandgap noise is observed which is demonstrated to be largely uncorrelated to bandgap trim voltage. Possible noise generating components within the bandgap circuit are identified. The dominant contributor for the observed 1/fγ nature of the bandgap noise is identified as the noise generated within the operational amplifier circuit block.","PeriodicalId":405694,"journal":{"name":"2010 IEEE Dallas Circuits and Systems Workshop","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Circuit characterization of low frequency noise in 45nm technology bandgap\",\"authors\":\"P. Srinivasan, A. Marshall\",\"doi\":\"10.1109/DCAS.2010.5955043\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Circuit characterization for low frequency noise of a bandgap reference circuit in a 45nm CMOS process is performed here. It is determined that the noise at lower frequencies follow 1/fγ spectra where 1<γ<2. This flattens off as thermal noise for frequencies greater than 1 KHz. Substantial variation in bandgap noise is observed which is demonstrated to be largely uncorrelated to bandgap trim voltage. Possible noise generating components within the bandgap circuit are identified. The dominant contributor for the observed 1/fγ nature of the bandgap noise is identified as the noise generated within the operational amplifier circuit block.\",\"PeriodicalId\":405694,\"journal\":{\"name\":\"2010 IEEE Dallas Circuits and Systems Workshop\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Dallas Circuits and Systems Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DCAS.2010.5955043\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Dallas Circuits and Systems Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DCAS.2010.5955043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Circuit characterization of low frequency noise in 45nm technology bandgap
Circuit characterization for low frequency noise of a bandgap reference circuit in a 45nm CMOS process is performed here. It is determined that the noise at lower frequencies follow 1/fγ spectra where 1<γ<2. This flattens off as thermal noise for frequencies greater than 1 KHz. Substantial variation in bandgap noise is observed which is demonstrated to be largely uncorrelated to bandgap trim voltage. Possible noise generating components within the bandgap circuit are identified. The dominant contributor for the observed 1/fγ nature of the bandgap noise is identified as the noise generated within the operational amplifier circuit block.
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