{"title":"空间因素对cmos技术芯片的影响","authors":"I. Zhuravleva","doi":"10.34220/mamsp_209-213","DOIUrl":null,"url":null,"abstract":"The resistance of the IC to all kinds of radiation is established by various types of integrated circuits with a characteristic structure, the criteria of which are allowed to record single or multiple transformations. The article considers that a significant influence on the suitability of microcircuits in the situation of exposure to ionizing radiation is manifested not by spatial phenomena in silicon, but by surface effects related to the silicon-dielectric distribution line.","PeriodicalId":113054,"journal":{"name":"Materials of the All-Russian Scientific and Practical Conference \"Modern aspects of modeling systems and processes\"","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"EFFECT OF SPACE SPACE FACTORS ON CMOS TECHNOLOGY CHIP\",\"authors\":\"I. Zhuravleva\",\"doi\":\"10.34220/mamsp_209-213\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The resistance of the IC to all kinds of radiation is established by various types of integrated circuits with a characteristic structure, the criteria of which are allowed to record single or multiple transformations. The article considers that a significant influence on the suitability of microcircuits in the situation of exposure to ionizing radiation is manifested not by spatial phenomena in silicon, but by surface effects related to the silicon-dielectric distribution line.\",\"PeriodicalId\":113054,\"journal\":{\"name\":\"Materials of the All-Russian Scientific and Practical Conference \\\"Modern aspects of modeling systems and processes\\\"\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials of the All-Russian Scientific and Practical Conference \\\"Modern aspects of modeling systems and processes\\\"\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.34220/mamsp_209-213\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials of the All-Russian Scientific and Practical Conference \"Modern aspects of modeling systems and processes\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.34220/mamsp_209-213","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
EFFECT OF SPACE SPACE FACTORS ON CMOS TECHNOLOGY CHIP
The resistance of the IC to all kinds of radiation is established by various types of integrated circuits with a characteristic structure, the criteria of which are allowed to record single or multiple transformations. The article considers that a significant influence on the suitability of microcircuits in the situation of exposure to ionizing radiation is manifested not by spatial phenomena in silicon, but by surface effects related to the silicon-dielectric distribution line.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
