{"title":"一种新型的垂直深沟复路DMOS (VTR-DMOS)","authors":"J. Glenn, J. Siekkinen","doi":"10.1109/ISPSD.2000.856805","DOIUrl":null,"url":null,"abstract":"A new super junction (SJ)-DMOS device, the vertical deep trench RESURF DMOS or VTR-DMOS, is proposed. The VTR-DMOS is a conventional vertical N-channel DMOS with a deep trench adjacent to the gate. The trench creates a vertical sidewall into which boron is solid source diffused to form a P-type doping pillar which is charge balanced to the N-type epitaxial drift region. 2-D simulations comparing a VTR-DMOS to a conventional VDMOS indicate a 5.5/spl times/ improvement in silicon-only Rsp for a BVdss>700 V.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"A novel vertical deep trench RESURF DMOS (VTR-DMOS)\",\"authors\":\"J. Glenn, J. Siekkinen\",\"doi\":\"10.1109/ISPSD.2000.856805\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new super junction (SJ)-DMOS device, the vertical deep trench RESURF DMOS or VTR-DMOS, is proposed. The VTR-DMOS is a conventional vertical N-channel DMOS with a deep trench adjacent to the gate. The trench creates a vertical sidewall into which boron is solid source diffused to form a P-type doping pillar which is charge balanced to the N-type epitaxial drift region. 2-D simulations comparing a VTR-DMOS to a conventional VDMOS indicate a 5.5/spl times/ improvement in silicon-only Rsp for a BVdss>700 V.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856805\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856805","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel vertical deep trench RESURF DMOS (VTR-DMOS)
A new super junction (SJ)-DMOS device, the vertical deep trench RESURF DMOS or VTR-DMOS, is proposed. The VTR-DMOS is a conventional vertical N-channel DMOS with a deep trench adjacent to the gate. The trench creates a vertical sidewall into which boron is solid source diffused to form a P-type doping pillar which is charge balanced to the N-type epitaxial drift region. 2-D simulations comparing a VTR-DMOS to a conventional VDMOS indicate a 5.5/spl times/ improvement in silicon-only Rsp for a BVdss>700 V.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
