Seyed Sepehr Mirfakhraei, Y. Audet, Ahmad Hassan, Mohamed Ali, Morteza Nabavi, M. Sawan
{"title":"一种基于CMOS磁体效应晶体管的可编程隔离放大器","authors":"Seyed Sepehr Mirfakhraei, Y. Audet, Ahmad Hassan, Mohamed Ali, Morteza Nabavi, M. Sawan","doi":"10.1109/NEWCAS49341.2020.9159790","DOIUrl":null,"url":null,"abstract":"In this paper, we present a high common mode voltage amplifier with a novel isolation technique. In this proposed structure, a minimum of 430 V isolation is satisfied from on-chip intermetal SiO2 layers. On the high-voltage side, an adjustable gain amplifier that supports ±2.5 V of differential voltage drives the coil. However, on the low-voltage side, a CMOS integrated magnetic field sensitive MOSFET (MAGFET) placed under the coil converts the generated magnetic field into a current imbalance which will be transformed to a differential voltage via a cascode stage. In addition, based on the ADC input dynamic range, the signal amplitude is adjusted by using a 6-bit dB-linear programmable gain amplifier (PGA) with a gain range of 0 to 54 dB and a maximum gain-nonlinearity error of 0.2 dB. This PGA has a temperature independent characteristic with a maximum gain error of 0.21 dB over a temperature variation between −40 to 80 °C. The design achieves a low input offset of 0.18 mV. It has also a low current consumption of 1.2 and 2.3 mA for the high voltage and the low voltage side, respectively.","PeriodicalId":135163,"journal":{"name":"2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A CMOS MAGFET-Based Programmable Isolation Amplifier\",\"authors\":\"Seyed Sepehr Mirfakhraei, Y. Audet, Ahmad Hassan, Mohamed Ali, Morteza Nabavi, M. Sawan\",\"doi\":\"10.1109/NEWCAS49341.2020.9159790\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present a high common mode voltage amplifier with a novel isolation technique. In this proposed structure, a minimum of 430 V isolation is satisfied from on-chip intermetal SiO2 layers. On the high-voltage side, an adjustable gain amplifier that supports ±2.5 V of differential voltage drives the coil. However, on the low-voltage side, a CMOS integrated magnetic field sensitive MOSFET (MAGFET) placed under the coil converts the generated magnetic field into a current imbalance which will be transformed to a differential voltage via a cascode stage. In addition, based on the ADC input dynamic range, the signal amplitude is adjusted by using a 6-bit dB-linear programmable gain amplifier (PGA) with a gain range of 0 to 54 dB and a maximum gain-nonlinearity error of 0.2 dB. This PGA has a temperature independent characteristic with a maximum gain error of 0.21 dB over a temperature variation between −40 to 80 °C. The design achieves a low input offset of 0.18 mV. It has also a low current consumption of 1.2 and 2.3 mA for the high voltage and the low voltage side, respectively.\",\"PeriodicalId\":135163,\"journal\":{\"name\":\"2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEWCAS49341.2020.9159790\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS49341.2020.9159790","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CMOS MAGFET-Based Programmable Isolation Amplifier
In this paper, we present a high common mode voltage amplifier with a novel isolation technique. In this proposed structure, a minimum of 430 V isolation is satisfied from on-chip intermetal SiO2 layers. On the high-voltage side, an adjustable gain amplifier that supports ±2.5 V of differential voltage drives the coil. However, on the low-voltage side, a CMOS integrated magnetic field sensitive MOSFET (MAGFET) placed under the coil converts the generated magnetic field into a current imbalance which will be transformed to a differential voltage via a cascode stage. In addition, based on the ADC input dynamic range, the signal amplitude is adjusted by using a 6-bit dB-linear programmable gain amplifier (PGA) with a gain range of 0 to 54 dB and a maximum gain-nonlinearity error of 0.2 dB. This PGA has a temperature independent characteristic with a maximum gain error of 0.21 dB over a temperature variation between −40 to 80 °C. The design achieves a low input offset of 0.18 mV. It has also a low current consumption of 1.2 and 2.3 mA for the high voltage and the low voltage side, respectively.