铜掺杂对纳米晶体SnSe薄膜表征的影响

G. Ahmed, B. K. Al-Maiyaly
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引用次数: 6

摘要

采用热蒸发技术在温度为(R.T)的玻璃基板上制备了厚度为400±20 nm的(SnSe)和SnSe:Cu薄膜,其Cu比分别为(0、3、5和7)%。采用x射线衍射(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)、能谱(EDS)、紫外可见吸收光谱(UV-Vis absorption spectroscopy, EDS)和霍尔效应(Hall effect)测量等方法,探讨了Cu掺杂浓度对(SnSe)纳米晶体薄膜结构、形貌、光学和电学性能的影响。x射线衍射分析表明,所有薄膜都具有沿(111)平面优先取向的正交结构,具有多晶性质。薄膜的晶粒尺寸随Cu掺杂比的不同而变化,范围为(18.167 ~ 25.91)nm。SEM研究表明,薄膜呈现小颗粒生长,SnSe的形貌可以由球形颗粒转变为血小板状颗粒。AFM研究表明,随着Cu掺杂比的增加,膜的晶粒尺寸在60.12 ~ 70.59 nm范围内变化。对未掺杂和Cu掺杂SnSe薄膜的光学测量表明,样品具有直接跃迁,光学带隙为(1.3 -1)。5) eV和吸收系数≥104 cm−1,这使得这些薄膜适用于光伏器件。霍尔效应测试表明,所有样品均具有p型电导率,载流子浓度均在1014/cm3左右,采用热蒸发技术在玻璃基板上制备了厚度为400±20 nm的(SnSe)和SnSe:Cu薄膜,其Cu比分别为(0、3、5和7)%。采用x射线衍射(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)、能谱(EDS)、紫外可见吸收光谱(UV-Vis absorption spectroscopy, EDS)和霍尔效应(Hall effect)测量等方法,探讨了Cu掺杂浓度对(SnSe)纳米晶体薄膜结构、形貌、光学和电学性能的影响。x射线衍射分析表明,所有薄膜都具有沿(111)平面优先取向的正交结构,具有多晶性质。薄膜的晶粒尺寸随Cu掺杂比的不同而变化,范围为(18.167 ~ 25.91)nm。SEM研究表明,薄膜呈现小颗粒生长,SnSe的形貌可以由球形颗粒转变为血小板状颗粒。AFM的调查显示……
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Cu doping effect on characterization of nano crystalline SnSe thin films
A thin film of (SnSe) and SnSe:Cu with various Cu ratio (0,3,5 and 7)% have been prepared by thermal evaporation technique with thickness 400±20 nm on glass substrate at (R.T). The effect of Cu dopants concentration on the structural, morphological, optical and electrical properties of (SnSe) Nano crystalline thin films was explored by using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS), UV–Vis absorption spectroscopy and Hall Effect measurement respectively. X-ray diffraction analysis reveal the polycrystalline nature of the all films deposited with orthorhombic structure which possess a preferred orientation along the (111) plane. The crystalline sizes of the films vary in the range of (18.167– 25.91) nm, depending on the Cu doping ratio. The SEM study show that the film exhibit growth of small grains and the morphologies of SnSe could be changed from spherical grains to platelet-like particles. The AFM investigations show that the films grain size vary in the range (60.12 to 70.59) nm with increasing Cu doping ratio. The optical measurements on un doped and Cu doped SnSe thin films indicate that the samples have direct transition with an optical band gap of (1.3 –1. 5) eV and the absorption coefficient ≥104 cm−1, which is make these films suitable for photovoltaic devices. Hall Effect measurement illustrate that all samples have p-type conductivity and the carrier concentration of the thin films was of the order of 1014/cm3A thin film of (SnSe) and SnSe:Cu with various Cu ratio (0,3,5 and 7)% have been prepared by thermal evaporation technique with thickness 400±20 nm on glass substrate at (R.T). The effect of Cu dopants concentration on the structural, morphological, optical and electrical properties of (SnSe) Nano crystalline thin films was explored by using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS), UV–Vis absorption spectroscopy and Hall Effect measurement respectively. X-ray diffraction analysis reveal the polycrystalline nature of the all films deposited with orthorhombic structure which possess a preferred orientation along the (111) plane. The crystalline sizes of the films vary in the range of (18.167– 25.91) nm, depending on the Cu doping ratio. The SEM study show that the film exhibit growth of small grains and the morphologies of SnSe could be changed from spherical grains to platelet-like particles. The AFM investigations sho...
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