{"title":"原子层沉积法制备氧化铝层的介电性能和耐辐射性能","authors":"D. I. Dolzhenko, V. Kapralova, N. Sudar","doi":"10.1109/EEXPOLYTECH.2018.8564381","DOIUrl":null,"url":null,"abstract":"The dielectric properties of MIM-structures with Al2O3 dielectric layers obtained by ALD method have been studied. The breakdown field strength of these structures has been determined to be about 4.4 MV/cm in the linear voltage increase mode and to have virtually no dependence on the voltage increase rate. The type of the frequency dependence of permittivity and dielectric loss of these structures has been established in the frequency range of 25 Hz — 1 MHz. Dielectric loss has been shown to increase upon sample exposure to gamma-quanta of caesium-137 proportionally to exposure time.","PeriodicalId":296618,"journal":{"name":"2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The Dielectric Properties and Radiation Resistance of Aluminum Oxide Layers Obtained by Atomic Layer Deposition\",\"authors\":\"D. I. Dolzhenko, V. Kapralova, N. Sudar\",\"doi\":\"10.1109/EEXPOLYTECH.2018.8564381\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The dielectric properties of MIM-structures with Al2O3 dielectric layers obtained by ALD method have been studied. The breakdown field strength of these structures has been determined to be about 4.4 MV/cm in the linear voltage increase mode and to have virtually no dependence on the voltage increase rate. The type of the frequency dependence of permittivity and dielectric loss of these structures has been established in the frequency range of 25 Hz — 1 MHz. Dielectric loss has been shown to increase upon sample exposure to gamma-quanta of caesium-137 proportionally to exposure time.\",\"PeriodicalId\":296618,\"journal\":{\"name\":\"2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EEXPOLYTECH.2018.8564381\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EEXPOLYTECH.2018.8564381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Dielectric Properties and Radiation Resistance of Aluminum Oxide Layers Obtained by Atomic Layer Deposition
The dielectric properties of MIM-structures with Al2O3 dielectric layers obtained by ALD method have been studied. The breakdown field strength of these structures has been determined to be about 4.4 MV/cm in the linear voltage increase mode and to have virtually no dependence on the voltage increase rate. The type of the frequency dependence of permittivity and dielectric loss of these structures has been established in the frequency range of 25 Hz — 1 MHz. Dielectric loss has been shown to increase upon sample exposure to gamma-quanta of caesium-137 proportionally to exposure time.
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