{"title":"未来技术的设备仿真","authors":"M. Stettler, R. Kotlyar, T. Rakshit, T. Linton","doi":"10.1109/IWCE.2009.5091105","DOIUrl":null,"url":null,"abstract":"Simulation approaches used in Intel to evaluate the applicability of new devices and materials for future microprocessor technologies are reviewed. Examples discussed include the evaluation of highly stressed materials, III -V HEMT devices, and carbon nanoribbons. The techniques employed are similar to those used in the research community, but focused on efficient evaluation within a versatile infrastructure that works for both development and research.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Device Simulation for Future Technologies\",\"authors\":\"M. Stettler, R. Kotlyar, T. Rakshit, T. Linton\",\"doi\":\"10.1109/IWCE.2009.5091105\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Simulation approaches used in Intel to evaluate the applicability of new devices and materials for future microprocessor technologies are reviewed. Examples discussed include the evaluation of highly stressed materials, III -V HEMT devices, and carbon nanoribbons. The techniques employed are similar to those used in the research community, but focused on efficient evaluation within a versatile infrastructure that works for both development and research.\",\"PeriodicalId\":443119,\"journal\":{\"name\":\"2009 13th International Workshop on Computational Electronics\",\"volume\":\"109 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 13th International Workshop on Computational Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2009.5091105\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 13th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2009.5091105","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation approaches used in Intel to evaluate the applicability of new devices and materials for future microprocessor technologies are reviewed. Examples discussed include the evaluation of highly stressed materials, III -V HEMT devices, and carbon nanoribbons. The techniques employed are similar to those used in the research community, but focused on efficient evaluation within a versatile infrastructure that works for both development and research.
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