K. Imokawa, N. Tanaka, A. Suwa, D. Nakamura, T. Sadoh, T. Goto, H. Ikenoue
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Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication
We characterize poly-Si thin films doped by KrF excimer laser irradiation with a phosphoric-acid coating. In this method, implantation and dopant activation can be performed simultaneously without damage of the poly-Si crystallization. After the laser doping, the mobility, carrier concentration, activation ratio, and resistivity of poly-Si were 61 cm2/Vs, 1.5×1018 cm−3, 14.6 %, and 0.08 Ω.cm, respectively.
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