{"title":"AlGaN/GaN hemt的电-热-机械模拟","authors":"M. Auf der Maur, G. Romano, A. Di Carlo","doi":"10.1109/IWCE.2012.6242824","DOIUrl":null,"url":null,"abstract":"A fully selfconsistent, coupled electro-thermo-mechanical model for nitride-based devices is presented and applied to a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT). The influence of converse piezoelectric effect, thermal stress and of the selfconsistent coupling on the static device characteristics and on the stress distribution in the device is studied.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Electro-thermo-mechanical simulation of AlGaN/GaN HEMTs\",\"authors\":\"M. Auf der Maur, G. Romano, A. Di Carlo\",\"doi\":\"10.1109/IWCE.2012.6242824\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully selfconsistent, coupled electro-thermo-mechanical model for nitride-based devices is presented and applied to a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT). The influence of converse piezoelectric effect, thermal stress and of the selfconsistent coupling on the static device characteristics and on the stress distribution in the device is studied.\",\"PeriodicalId\":375453,\"journal\":{\"name\":\"2012 15th International Workshop on Computational Electronics\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 15th International Workshop on Computational Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2012.6242824\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 15th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2012.6242824","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electro-thermo-mechanical simulation of AlGaN/GaN HEMTs
A fully selfconsistent, coupled electro-thermo-mechanical model for nitride-based devices is presented and applied to a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT). The influence of converse piezoelectric effect, thermal stress and of the selfconsistent coupling on the static device characteristics and on the stress distribution in the device is studied.
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