A study on split-drain MAGFET channel boundary charge trapping based on numerical simulation

In this paper, the linearity of the magnetic sensitivity of split-drain magnetic field effect transistor (SSD-MAGFET) is studied, where experimental results have shown that the magnetic sensitivity over wide magnetic field strength shows a piecewise linear response with respect to applied magnetic field strength. Furthermore, the experimental results also showed that the piecewise linear response depends on the sector angle of the SSD-MAGFET. Previous studies have attributed these properties to the channel boundary trapping effect. The underlying charge trapping behavior are investigated by three-dimensional numerical device simulation. The simulation results match well with experimental measurements, which is strong evidence that the the physics of piecewise linear magnetic sensitivity of SSD-MAGFET is attributed to the channel boundary charge trapping.