G. Uchida, Shota Nunomutra, H. Miyata, S. Iwashita, Dsaisuke Yamashita, Hidefumi Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani
{"title":"Ar对Si(CH3)2(OCH3)2射频放电击穿电压的影响","authors":"G. Uchida, Shota Nunomutra, H. Miyata, S. Iwashita, Dsaisuke Yamashita, Hidefumi Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani","doi":"10.1109/TENCON.2010.5686704","DOIUrl":null,"url":null,"abstract":"We present detailed measurements on breakdown voltage (V<inf>f</inf>) in a RF discharge with Si(CH<inf>3</inf>)<inf>2</inf>(OCH<inf>3</inf>)<inf>2</inf> gas diluted with Ar. When Ar concentration (P<inf>Ar</inf>) is increased, the V<inf>f</inf> gradually decreases up to P<inf>Ar</inf> = 50 %, and then is followed by a drastic decrease. The P<inf>Ar</inf> dependence of V<inf>f</inf> is well explained by a feature of the ion-induced secondary electron emission coefficient (γ) deduced from measured Paschen curves. A drastic increase in Ar ion flux with P<inf>Ar</inf> induces high emission of electrons from cathode surface, resulting in lowing V<inf>f</inf>.","PeriodicalId":101683,"journal":{"name":"TENCON 2010 - 2010 IEEE Region 10 Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge\",\"authors\":\"G. Uchida, Shota Nunomutra, H. Miyata, S. Iwashita, Dsaisuke Yamashita, Hidefumi Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani\",\"doi\":\"10.1109/TENCON.2010.5686704\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present detailed measurements on breakdown voltage (V<inf>f</inf>) in a RF discharge with Si(CH<inf>3</inf>)<inf>2</inf>(OCH<inf>3</inf>)<inf>2</inf> gas diluted with Ar. When Ar concentration (P<inf>Ar</inf>) is increased, the V<inf>f</inf> gradually decreases up to P<inf>Ar</inf> = 50 %, and then is followed by a drastic decrease. The P<inf>Ar</inf> dependence of V<inf>f</inf> is well explained by a feature of the ion-induced secondary electron emission coefficient (γ) deduced from measured Paschen curves. A drastic increase in Ar ion flux with P<inf>Ar</inf> induces high emission of electrons from cathode surface, resulting in lowing V<inf>f</inf>.\",\"PeriodicalId\":101683,\"journal\":{\"name\":\"TENCON 2010 - 2010 IEEE Region 10 Conference\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TENCON 2010 - 2010 IEEE Region 10 Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.2010.5686704\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TENCON 2010 - 2010 IEEE Region 10 Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.2010.5686704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge
We present detailed measurements on breakdown voltage (Vf) in a RF discharge with Si(CH3)2(OCH3)2 gas diluted with Ar. When Ar concentration (PAr) is increased, the Vf gradually decreases up to PAr = 50 %, and then is followed by a drastic decrease. The PAr dependence of Vf is well explained by a feature of the ion-induced secondary electron emission coefficient (γ) deduced from measured Paschen curves. A drastic increase in Ar ion flux with PAr induces high emission of electrons from cathode surface, resulting in lowing Vf.