Ar对Si(CH3)2(OCH3)2射频放电击穿电压的影响

G. Uchida, Shota Nunomutra, H. Miyata, S. Iwashita, Dsaisuke Yamashita, Hidefumi Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani
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引用次数: 0

摘要

我们给出了用Ar稀释的Si(CH3)2(OCH3)2气体射频放电击穿电压(Vf)的详细测量。当Ar浓度(PAr)增加时,Vf逐渐降低至PAr = 50%,然后急剧下降。从测量的Paschen曲线推导出离子诱导的二次电子发射系数(γ),很好地解释了Vf对PAr的依赖。PAr作用下氩离子通量的急剧增加引起阴极表面电子的高发射,导致Vf降低。
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Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge
We present detailed measurements on breakdown voltage (Vf) in a RF discharge with Si(CH3)2(OCH3)2 gas diluted with Ar. When Ar concentration (PAr) is increased, the Vf gradually decreases up to PAr = 50 %, and then is followed by a drastic decrease. The PAr dependence of Vf is well explained by a feature of the ion-induced secondary electron emission coefficient (γ) deduced from measured Paschen curves. A drastic increase in Ar ion flux with PAr induces high emission of electrons from cathode surface, resulting in lowing Vf.
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