{"title":"基于非线性注入半导体激光器理论的实验建模","authors":"M. G. Noppe","doi":"10.1109/APEIE.2000.913091","DOIUrl":null,"url":null,"abstract":"The formulas for intensity of output radiation from injection semiconductor laser are deduced. Paper shows that saturation effect is insignificant and the basic nonlinear effect in the semiconductor laser is playing a main role. Modeling a series of experiments is carried out.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Modeling of experiments on the basis of nonlinear injection semiconductor lasers theory\",\"authors\":\"M. G. Noppe\",\"doi\":\"10.1109/APEIE.2000.913091\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The formulas for intensity of output radiation from injection semiconductor laser are deduced. Paper shows that saturation effect is insignificant and the basic nonlinear effect in the semiconductor laser is playing a main role. Modeling a series of experiments is carried out.\",\"PeriodicalId\":184476,\"journal\":{\"name\":\"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat\",\"volume\":\"107 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEIE.2000.913091\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEIE.2000.913091","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of experiments on the basis of nonlinear injection semiconductor lasers theory
The formulas for intensity of output radiation from injection semiconductor laser are deduced. Paper shows that saturation effect is insignificant and the basic nonlinear effect in the semiconductor laser is playing a main role. Modeling a series of experiments is carried out.
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