技术扩展及低功耗数据转换器设计

F. Maloberti
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引用次数: 0

摘要

当采用新型高k栅极介质时,电源电压的降低使模拟电路的电压净空减小,栅极漏电流增大,平面体MOS晶体管的电压增益减小,1/f噪声恶化。上述限制的后果是双重的:保持一点落后于技术前沿和推动模拟数字接口向数字领域。但是,现实世界的信号都是模拟信号,因此不可能实现全球性的数字世界。因此,趋势是将重点放在接口:A/D和D/A,并尽量减少模拟预处理。然而,为了获得合适的分辨率,需要设计具有可接受增益的运算放大器或OTA,并获得具有良好灵敏度和低偏移的比较器,因此除了上述问题外,还面临晶体管和无源元件不匹配的校正或补偿问题。
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Technology scaling and low-power data converter design
The decrease of the supply voltage reduces the voltage headroom in analog circuits, the gate leakage current increases, the voltage gain decreases in planar bulk MOS transistors, 1/f noise deteriorate when using new high-k gate dielectrics. The consequences of the above limits are twofold: to remain a little behind the technology front and to push the analog digital interface toward the digital domain. However, a global digital world is impossible because signals of the real world are analog. Therefore, the trend is to focus on the interfaces: A/D and D/A, and minimize the analog preprocessing. Nevertheless, for achieving a suitable resolution it is necessary to design op-amps or OTA with an acceptable gain, and to obtain comparators with good sensitivity and low offset, thus facing in addition to the above the problem of correcting or compensating for the transistor and passive components mismatches.
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