单个电子器件的SPICE模型

R. V. D. Haar, J. Hoekstra, Roelof H. Klunder
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引用次数: 6

摘要

单电子隧穿(SET)技术可以构建具有极低功耗特性的电子电路。因此,这些SET电路必须在单电子(电流)状态下工作。为了模拟这种状态下的SET电路,编写了SPICE模型。与所谓的正统单电子理论的规定相反,SPICE模型探讨了隧道电流和隧道条件的离散性。本文对该SPICE模型进行了简要描述。使用SPICE模型模拟了几个已知的SET电路,并使用基于单电子正统理论的著名SET设备模拟器SIMON进行了验证。
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A SPICE model for single electronics
With single-electron tunneling (SET) technology it is possible to build electronic circuits with extreme low power properties. These SET circuits must therefore operate in the single electronics (current) regime. To simulate SET circuits in this regime, a SPICE model has been written. In contrast to the prescriptions in the so-called orthodox theory of single-electronics, the SPICE model explores the discrete character of the tunnel current and the tunnel condition. In this paper, a brief description of this SPICE model is given. Several known SET circuits are simulated using this SPICE model and are verified with a well known SET device simulator called SIMON, which is based on the orthodox theory of single-electronics.
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