{"title":"两种集总电荷型功率MOSFET模型","authors":"Y. Subramanian, P. Lauritzen, K. Green","doi":"10.1109/CIPE.1998.779651","DOIUrl":null,"url":null,"abstract":"This paper presents models for two DMOS devices, the low-voltage lateral diffused MOSFET for IC applications (LDMOS) and the discrete vertical diffused power MOSFET (VDMOS), both developed using the lumped-charge methodology. The LDMOS model gives better performance than the BSIM3 which is the industry-standard model for the lateral diffused MOSFET. The VDMOS model is an improved version of the Budihardjo-Lauritzen model.","PeriodicalId":250682,"journal":{"name":"COM.P.EL.98. Record 6th Workshop on Computer in Power Electronics (Cat. No.98TH8358)","volume":"271 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Two lumped-charge based power MOSFET models\",\"authors\":\"Y. Subramanian, P. Lauritzen, K. Green\",\"doi\":\"10.1109/CIPE.1998.779651\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents models for two DMOS devices, the low-voltage lateral diffused MOSFET for IC applications (LDMOS) and the discrete vertical diffused power MOSFET (VDMOS), both developed using the lumped-charge methodology. The LDMOS model gives better performance than the BSIM3 which is the industry-standard model for the lateral diffused MOSFET. The VDMOS model is an improved version of the Budihardjo-Lauritzen model.\",\"PeriodicalId\":250682,\"journal\":{\"name\":\"COM.P.EL.98. Record 6th Workshop on Computer in Power Electronics (Cat. No.98TH8358)\",\"volume\":\"271 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"COM.P.EL.98. Record 6th Workshop on Computer in Power Electronics (Cat. No.98TH8358)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CIPE.1998.779651\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"COM.P.EL.98. Record 6th Workshop on Computer in Power Electronics (Cat. No.98TH8358)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIPE.1998.779651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents models for two DMOS devices, the low-voltage lateral diffused MOSFET for IC applications (LDMOS) and the discrete vertical diffused power MOSFET (VDMOS), both developed using the lumped-charge methodology. The LDMOS model gives better performance than the BSIM3 which is the industry-standard model for the lateral diffused MOSFET. The VDMOS model is an improved version of the Budihardjo-Lauritzen model.
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