Yu-Ming Lin, K. Jenkins, J. Ott, C. Dimitrakopoulos, D. Farmer, Yanqing Wu, A. Grill, P. Avouris
{"title":"晶圆级外延石墨烯的电学特性及其射频应用","authors":"Yu-Ming Lin, K. Jenkins, J. Ott, C. Dimitrakopoulos, D. Farmer, Yanqing Wu, A. Grill, P. Avouris","doi":"10.1109/MWSYM.2011.5973164","DOIUrl":null,"url":null,"abstract":"High-performance graphene field-effect transistors are fabricated on two-inch graphene-on-SiC wafers. Epitaxial graphene was synthesized on SiC wafers by thermal annealing to form one to two layers of graphene. The graphene transistors possess high current density of > 1mA/µm, and a cutoff frequency of 170 GHz is achieved for graphene FETs with a gate length of 90 nm. These results unravel the great potential of graphene for future RF applications.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Electrical characterization of wafer-scale epitaxial graphene and its RF applications\",\"authors\":\"Yu-Ming Lin, K. Jenkins, J. Ott, C. Dimitrakopoulos, D. Farmer, Yanqing Wu, A. Grill, P. Avouris\",\"doi\":\"10.1109/MWSYM.2011.5973164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-performance graphene field-effect transistors are fabricated on two-inch graphene-on-SiC wafers. Epitaxial graphene was synthesized on SiC wafers by thermal annealing to form one to two layers of graphene. The graphene transistors possess high current density of > 1mA/µm, and a cutoff frequency of 170 GHz is achieved for graphene FETs with a gate length of 90 nm. These results unravel the great potential of graphene for future RF applications.\",\"PeriodicalId\":294862,\"journal\":{\"name\":\"2011 IEEE MTT-S International Microwave Symposium\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2011.5973164\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2011.5973164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical characterization of wafer-scale epitaxial graphene and its RF applications
High-performance graphene field-effect transistors are fabricated on two-inch graphene-on-SiC wafers. Epitaxial graphene was synthesized on SiC wafers by thermal annealing to form one to two layers of graphene. The graphene transistors possess high current density of > 1mA/µm, and a cutoff frequency of 170 GHz is achieved for graphene FETs with a gate length of 90 nm. These results unravel the great potential of graphene for future RF applications.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
