双QW大功率808nm二极管激光器的非对称非加宽波导结构

International Symposium on High Power Laser Systems and Applications Pub Date : 2017-01-13 DOI:10.1117/12.2257308

S. P. Abbasi, M. Mahdieh

{"title":"双QW大功率808nm二极管激光器的非对称非加宽波导结构","authors":"S. P. Abbasi, M. Mahdieh","doi":"10.1117/12.2257308","DOIUrl":null,"url":null,"abstract":"In this paper, we propose an asymmetric epitaxial layer structre for designing 808nm diode laser. In this asymmetric sructure, the p-waveguide is reduced in thickness and the p-cladding is doped for increasing the thermal conductivity and consequently better heat extraction. The main purpose of using such design is enhancing the laser gain by reduction of loss in laser cavity, and reduction of electrical and thermal resistivity of the diode laser.","PeriodicalId":293926,"journal":{"name":"International Symposium on High Power Laser Systems and Applications","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Asymmetric, nonbroadened waveguide structures for double QW high-power 808nm diode laser\",\"authors\":\"S. P. Abbasi, M. Mahdieh\",\"doi\":\"10.1117/12.2257308\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose an asymmetric epitaxial layer structre for designing 808nm diode laser. In this asymmetric sructure, the p-waveguide is reduced in thickness and the p-cladding is doped for increasing the thermal conductivity and consequently better heat extraction. The main purpose of using such design is enhancing the laser gain by reduction of loss in laser cavity, and reduction of electrical and thermal resistivity of the diode laser.\",\"PeriodicalId\":293926,\"journal\":{\"name\":\"International Symposium on High Power Laser Systems and Applications\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-01-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Symposium on High Power Laser Systems and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2257308\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on High Power Laser Systems and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2257308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文提出了一种用于808nm二极管激光器设计的非对称外延层结构。在这种不对称结构中，p波导的厚度被减小，p包层被掺杂，以增加热导率，从而更好地提取热量。采用这种设计的主要目的是通过减少激光腔内的损耗和降低二极管激光器的电阻率和热阻来提高激光增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Asymmetric, nonbroadened waveguide structures for double QW high-power 808nm diode laser

In this paper, we propose an asymmetric epitaxial layer structre for designing 808nm diode laser. In this asymmetric sructure, the p-waveguide is reduced in thickness and the p-cladding is doped for increasing the thermal conductivity and consequently better heat extraction. The main purpose of using such design is enhancing the laser gain by reduction of loss in laser cavity, and reduction of electrical and thermal resistivity of the diode laser.

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International Symposium on High Power Laser Systems and Applications

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