Takenori Kakutani, Yuya Suzuki, Muhammad Ali, Serhat Erdogan, M. Kathaperumal, M. Swaminathan
{"title":"5G射频模块用低损耗材料的可靠性和高频滤波特性","authors":"Takenori Kakutani, Yuya Suzuki, Muhammad Ali, Serhat Erdogan, M. Kathaperumal, M. Swaminathan","doi":"10.1109/ISSM51728.2020.9377527","DOIUrl":null,"url":null,"abstract":"With the tremendous advances and increasing demand in 5G communications, the low-loss performance of RF device components becomes more critical. Two parameters that have significant impact on the low-loss RF performance are lower circuit conductor loss and dielectric loss of the build-up materials. Therefore, this study is focused on the loss tangent (Df) of the dielectric build-up material and demonstration of its electrical reliability with a low-loss substrate for high-frequency transmission. This newly developed advanced low-loss dry film build-up material exhibits a Dfvalues of < 0.003 at 39 GHz and is applicable to high frequency transmission. This build-up material also exhibits excellent electrical reliability required for advanced dielectric materials. For evaluation of the filter characteristics in the mm Wave band, a substrate with filter circuit structures was fabricated using the low loss dielectric material. Transmission characteristics of the filters were measured and demonstrated to have a minimum transmission loss of less than 1.18 dB at 39 GHz.","PeriodicalId":270309,"journal":{"name":"2020 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Reliability and High-Frequency Filter Characteristics of a Low-Loss Material for 5G RF Modules\",\"authors\":\"Takenori Kakutani, Yuya Suzuki, Muhammad Ali, Serhat Erdogan, M. Kathaperumal, M. Swaminathan\",\"doi\":\"10.1109/ISSM51728.2020.9377527\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the tremendous advances and increasing demand in 5G communications, the low-loss performance of RF device components becomes more critical. Two parameters that have significant impact on the low-loss RF performance are lower circuit conductor loss and dielectric loss of the build-up materials. Therefore, this study is focused on the loss tangent (Df) of the dielectric build-up material and demonstration of its electrical reliability with a low-loss substrate for high-frequency transmission. This newly developed advanced low-loss dry film build-up material exhibits a Dfvalues of < 0.003 at 39 GHz and is applicable to high frequency transmission. This build-up material also exhibits excellent electrical reliability required for advanced dielectric materials. For evaluation of the filter characteristics in the mm Wave band, a substrate with filter circuit structures was fabricated using the low loss dielectric material. Transmission characteristics of the filters were measured and demonstrated to have a minimum transmission loss of less than 1.18 dB at 39 GHz.\",\"PeriodicalId\":270309,\"journal\":{\"name\":\"2020 International Symposium on Semiconductor Manufacturing (ISSM)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Symposium on Semiconductor Manufacturing (ISSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM51728.2020.9377527\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM51728.2020.9377527","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability and High-Frequency Filter Characteristics of a Low-Loss Material for 5G RF Modules
With the tremendous advances and increasing demand in 5G communications, the low-loss performance of RF device components becomes more critical. Two parameters that have significant impact on the low-loss RF performance are lower circuit conductor loss and dielectric loss of the build-up materials. Therefore, this study is focused on the loss tangent (Df) of the dielectric build-up material and demonstration of its electrical reliability with a low-loss substrate for high-frequency transmission. This newly developed advanced low-loss dry film build-up material exhibits a Dfvalues of < 0.003 at 39 GHz and is applicable to high frequency transmission. This build-up material also exhibits excellent electrical reliability required for advanced dielectric materials. For evaluation of the filter characteristics in the mm Wave band, a substrate with filter circuit structures was fabricated using the low loss dielectric material. Transmission characteristics of the filters were measured and demonstrated to have a minimum transmission loss of less than 1.18 dB at 39 GHz.